Robustness of Self-Isolation High-Voltage Integrated Circuits against the Voltage Surge during Conductivity Modulation Delay in Free-Wheeling Diode

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概要

• 論文の詳細を見る

• In this paper, we report on the robustness of self-isolation high-voltage integrated circuits (HVICs) against a voltage surge during a conductivity modulation delay in a free-wheeling diode (FWD) for the first time. Two types of voltage surge that have a negative voltage against the ground potential are applied to HVICs simultaneously in the conventional switching mode. The voltage surge activates parasitic bipolar transistors that may destroy the HVICs. In this study, the operation of parasitic bipolar transistors induced by the surge and the suppression of the action of these transistors were investigated, and the robustness of the self-isolation 1200 V HVICs against surge was verified experimentally.

• 2007-02-15

著者

• Kumagai Naoki

  Fuji Electric Advanced Technology Co. Ltd.

• Nishiura Akira

  Fuji Electric Device Technology Co. Ltd.

• Yamazaki Tomoyuki

  Fuji Electric Device Technology Co. Ltd.

• Fujihira Tatsuhiko

  Fuji Electric Device Technology Co. Ltd.

• Matsumoto Takashi

  School Of Engineering University Of Yamanashi

• Nishiura Akira

  Fuji Electric Device Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

• Kumagai Naoki

  Fuji Electric Advanced Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

• Fujihira Tatsuhiko

  Fuji Electric Device Technology Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

• Matsumoto Takashi

  School of Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan

関連論文

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• High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure
• Proposal of New Interconnection Technique for Very High-Voltage IC's
• Robustness of Self-Isolation High-Voltage Integrated Circuits against the Voltage Surge during Conductivity Modulation Delay in Free-Wheeling Diode
• Experimental and Numerical Studies on $dV/dt$ Robustness of 1200 V High-Voltage Integrated Circuits Using Self-Isolation Structure
• Short-Circuit Destruction of Field-Stop-Structure Inslated Gate Bipolar Transistor
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