High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure

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概要

• 論文の詳細を見る

• In this paper, we report an area-effective 600 V p-channel level shifter using a self-isolation structure without the degradation of blocking capability for the first time. To prevent the degradation of high-voltage isolation performance, the charge in a double reduced surface electric field (RESURF) structure is controlled at the border region between a high-voltage p-channel metal oxide semiconductor field effect transistor (MOSFET) and a high-voltage isolation region. Because of a divided p-offset region in the drift region of the high-voltage p-channel MOSFET and the high-voltage isolation region, parasitic current to the ground (GND) terminal through the isolation region can be ignored. By using the new high-voltage p-channel level shifter, a 400 V level shift operation is confirmed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• FUJIHIRA Tatsuhiko

  Fuji Electric Device Technology Co., Ltd.

• MATSUMOTO Takashi

  School of Engineering, University of Yamanashi

• Seki Yasukazu

  Fuji Electric Advanced Technology Co. Ltd.

• Kumagai Naoki

  Fuji Electric Advanced Technology Co. Ltd.

• Nishiura Akira

  Fuji Electric Device Technology Co. Ltd.

• Yamazaki Tomoyuki

  Fuji Electric Device Technology Co. Ltd.

• Fujihira Tatsuhiko

  Fuji Electric Device Technology Co. Ltd.

• Matsumoto Takashi

  School Of Engineering University Of Yamanashi

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