Local Oxidation of 6H-SiC

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概要

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• SiC is a promising material for high-temperature and the high-power devices. We propose local oxidation for the isolation of the p-n junction. The oxidation rate of silicon nitride is found to be low enough compared to the C face of 6H-SiC, even at 1200℃. The comparison between the process simulation and the experiment is made, with the results showing that the bird's beak of 6H-SiC is longer than that of silicon due to the smaller oxidation rate of 6H-SiC.

• 社団法人応用物理学会の論文
• 1994-08-15

著者

• SEKI Yasukazu

  Fuji Electric Corporate Research and Development, Ltd.

• Seki Yasukazu

  Fuji Electric Corporate Research And Development Ltd.

• Seki Yasukazu

  Fuji Electric Advanced Technology Co. Ltd.

• Ueno K

  Department Of Chemistry Saitama University

• UENO Katsunori

  Fuji Electric Corporate Research and Development Ltd.

関連論文

• Energy Dependence of Sensitivity and Its Control by Electrode Design in a-Si:H/c-Si Heterojunction Gamma-Ray Detectors for Dosimeters
• Local Oxidation of 6H-SiC
• Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor
• Plasma CVD-Grown ^B-Enriched Boron Films for Si Neutron Detectors
• High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure
• Enhanced Oxidation of Ion-Implanted Si-Face of 6H-SiC
• Experimental and Numerical Studies on $dV/dt$ Robustness of 1200 V High-Voltage Integrated Circuits Using Self-Isolation Structure

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