Proposal of New Interconnection Technique for Very High-Voltage IC's
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概要
- 論文の詳細を見る
A new, cost-effective, high-voltage interconnection technique for very high-voltage IC's, called the "self-shielding technique", is proposed. To avoid reduction of the breakdown voltage of high-voltage devices due to the electric potential of overlying interconnections, only the self-PN-junction structures of the high-voltage devices themselves are utilized in the self-shielding technique. No additional shielding structure is required, even to realize a very high-voltage IC above 1000 V. The design concept and device structures are presented with the experimental results on the electrical characterictics of self-shielded interconnections and on the operations of self-shielded 1200-V level shifters. Comparison between self-shielded and conventional high-voltage IC's (HVIC's) and the process and the devices of self-shielded HVIC technology are also described.
- 社団法人応用物理学会の論文
- 1996-11-15
著者
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Kumagai Naoaki
Faculty Of Engineering Iwate University
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Kumagai Naoki
Fuji Electric Advanced Technology Co. Ltd.
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Kumagai Naoki
Fuji Electric Corporate Research And Development Ltd.
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FUJIHIRA Tatsuhiko
Matsumoto Factory, Fuji Electric Co., Ltd.
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YANO Yukio
Fuji Electric Corporate Research and Development, Ltd.
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OBINATA Shigeyuki
Matsumoto Factory, Fuji Electric Co., Ltd.
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SAKURAI Kenya
Matsumoto Factory, Fuji Electric Co., Ltd.
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Fujihira T
Fuji Electric Co. Ltd. Matsumoto Jpn
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Fujihira Tatsuhiko
Matsumoto Factory Fuji Electric Co. Ltd.:graduate School Of Engineering Yamanashi University
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Yano Yukio
Fuji Electric Corporate Research And Development Ltd.
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Sakurai Kenya
Matsumoto Factory Fuji Electric Co. Ltd.
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Obinata Shigeyuki
Matsumoto Factory Fuji Electric Co. Ltd.
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