Theory of Semiconductor Superjunction Devices

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概要

• 論文の詳細を見る

• A new theory of semiconductor devices, called "semiconductor superjunction (SJ) theory", is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10^<-2> that of conventional devices.

• 1997-10-15

著者

• Fujihira Tatsuhiko

  Matsumoto Factory Fuji Electric Co. Ltd.:graduate School Of Engineering Yamanashi University

関連論文

• Theory of Semiconductor Superjunction Devices
• Proposal of New Interconnection Technique for Very High-Voltage IC's

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