Enhanced Oxidation of Ion-Implanted Si-Face of 6H-SiC

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概要

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• The Si-face of 6H-SiC is slowly oxidized even at temperatures as high as 1200℃ in steam. We found that the oxidation rate of the implanted Si-face is several times faster than that of the non-implanted face. This oxidation rate strongly depends on the mass number of the implanted ion, and on the acceleration energy. Based on the study of the oxidation rate, dosage and acceleration energy dependence, this phenomenon is concluded to be induced by the amorphous layer of the implanted region. We demonstrated the selective oxidation technique utilizing this phenomenon in its application to various devices.

• 社団法人応用物理学会の論文
• 1994-08-01

著者

• Seki Yasukazu

  Fuji Electric Advanced Technology Co. Ltd.

• UENO Katsunori

  Fuji Electric Corporate Research and Development Ltd.

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• Experimental and Numerical Studies on $dV/dt$ Robustness of 1200 V High-Voltage Integrated Circuits Using Self-Isolation Structure

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