Energy Dependence of Sensitivity and Its Control by Electrode Design in a-Si:H/c-Si Heterojunction Gamma-Ray Detectors for Dosimeters
スポンサーリンク
概要
- 論文の詳細を見る
- 1992-05-15
著者
-
Sato N
Semiconductor Technology Development Group Semiconductor Solutions Network Company Sony Corporation
-
SATO Noritada
Fuji Electric Corporate Research and Development, Ltd.
-
OKAMOTO Eisuke
Fuji Electric Co., Ltd.
-
SUZUKI Toshikazu
Fuji Electric Co., Ltd.
-
SEKI Yasukazu
Fuji Electric Corporate Research and Development, Ltd.
-
Sato Noritada
Fuji Electric Corporate Research And Development Ltd.
-
Seki Yasukazu
Fuji Electric Corporate Research And Development Ltd.
-
Seki Yasukazu
Fuji Electric Advanced Technology Co. Ltd.
-
Okamoto Eisuke
Fuji Electric Co. Ltd.
-
Suzuki Toshikazu
Fuji Electric Co. Ltd.
関連論文
- Scaling Relations for the Production and Acceleration of a J×B Driven Rotating Plasma
- Recent Results of Rotating Plasma Experiments for Isotope Separation
- Control of Ion Energy for Low-Damage Plasma Processing in RF Discharge
- Low Energy Optical Excitations of CeBi : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Heavy Electrons : Experiments
- Energy Dependence of Sensitivity and Its Control by Electrode Design in a-Si:H/c-Si Heterojunction Gamma-Ray Detectors for Dosimeters
- Variation of Radial Plasma Density Profile with the Excitation Frequency in a Magnetron-Type Plasma
- Modified Magnetron Type Plasma Source for Etching Applications
- Measurements of Power Absorption in a Modified Magnetron-type Discharge
- Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAM
- Gamma Ray Detection in DC Glowlike Discharge with Deuterated Palladium Electrode
- New Element Production on/in Deuterated and Hydrated Palladium Electrodes by DC GIOW Discharge : Nuclear Science, Plasmas, and Electric Discharges
- Production of a Large-Diameter Uniform Plasma by Modified Magnetron-Typed Radio Frequency Discharge
- Large-Diameter Reactive Plasma Produced by a Plane Electron Cyclotron Resonance Antenna ( Plasma Processing)
- Local Oxidation of 6H-SiC
- Numerical Simulation of Static and Dynamic Characteristics of Dual-Gate Metal Oxide Semiconductor Thyristor
- Plasma CVD-Grown ^B-Enriched Boron Films for Si Neutron Detectors
- High-Voltage p-Channel Level Shifter Using Charge-Controlled Self-Isolation Structure
- Enhanced Oxidation of Ion-Implanted Si-Face of 6H-SiC
- Experimental and Numerical Studies on $dV/dt$ Robustness of 1200 V High-Voltage Integrated Circuits Using Self-Isolation Structure