Plasma CVD-Grown ^<10>B-Enriched Boron Films for Si Neutron Detectors

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概要

• 論文の詳細を見る

• Hydrogenated amorphous boron (a-B:H) films were deposited on Si crystal substrates using DC glow discharge in B_2H_6 diluted to 1000 ppm in H_2. We found that the rate of the deposition was about two times higher for ^<10>B-enriched B_2H_6 than for natural B_2H_6. The deposition process was observed by optical emission spectroscopy of the DC glow. BH emission lines at 433.2 nm and 369.4 nm were strongly enhanced in the ^<10>B-enriched B_2H_6/H_2 compared with the natural B_2H_6/H_2. This manifests an isotopic effect on the deposition rate of the a-B:H film. Concentrations of ^<10>B, ^<11>B and ^1H in the films were analyzed by SIMS. The hydrogen content of the films was found to be 3.9×10^<23> atoms/cm^3 from the thermal hydrogen release measured by gas chromatography. The ^<10>B-enriched film was applied to construct a novel silicon neutron detector. It showed a satisfactory sensitivity for neutron detection.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Sato Noritada

  Fuji Electric Corporate Research And Development Ltd.

• Seki Yasukazu

  Fuji Electric Advanced Technology Co. Ltd.

• Ishiwata O

  Fuji Electric Corporate Res. And Dev. Kanagawa Jpn

• Ishiwata Osamu

  Fuji Electric Corporate Research And Development Material Science And Technology Laboratory

• UEDA Atsushi

  Fuji Electric Corporate Research and Development, Ltd.

• Ueda Atsushi

  Fuji Electric Corporate Research And Development Ltd.

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