Wafer Bonding of InP to Si and Its Application to Optical Devices
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Kamijoh Takeshi
Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat
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WADA Hiroshi
Optoelectronics Oki Laboratory, Real World Computing Partnership, c
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Wada Hiroshi
Optoelectronics Oki Laboratory Real World Computing Partnership C
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Wada Hiroshi
Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat
関連論文
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- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Effects of Heat Treatment on Bonding Properties in InP-to-Si Direct Wafer Bonding
- Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
- Wafer Bonding of InP to Si and Its Application to Optical Devices
- Wafer Bonding of InP to Si and its Application to Optical Devices
- Thermal Conductivity of Amorphous Silicon