Thermal Conductivity of Amorphous Silicon

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概要

• 論文の詳細を見る

• We measured the thermal conductivity of amorphous silicon using a new simple steady state method implementing deposited Pt stripes as both resistive heaters and temperature monitors. Amorphous Si films were sputtered on Si substrates and heat was injected through the Pt resistive heaters. The increase in heater temperature was determined by the temperature-dependent electrical resistance of the Pt stripes, We thus determined the thermal conductivity of a-Si at room temperature to be 1.8 W/m・K, which is about one-hundredth of that of crystal Si. This information is very important to properly design the thermal resistance of long-wavelength surface emitting lasers which use the a-Si in high-reflective stack mirrors.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Kamijoh Takeshi

  O Semiconductor Technology Laboratory Oki Electric Industry Co Ltd.

• WADA Hiroshi

  Optoelectronics Oki Laboratory, Real World Computing Partnership, c

• Wada Hiroshi

  Optoelectronics Oki Laboratory Real World Computing Partnership C

関連論文

• Effects of Heat Treatment on Bonding Properties in InP-to-Si Direct Wafer Bonding
• Wafer Bonding of InP to Si and Its Application to Optical Devices
• Wafer Bonding of InP to Si and its Application to Optical Devices
• Thermal Conductivity of Amorphous Silicon

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