Wafer Bonding of InP to Si and its Application to Optical Devices

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概要

• 論文の詳細を見る

• Wafer bonding technology has been investigated to integrate InP lasers on Si wafers for optoelectronic integrated circuits. Room temperature continuous-wave (CW) operation of edge-emitting lasers and photo-pumped operation of surface-emitting lasers have been achieved. A novel bonding process which allows an integration of the optical devices on structured wafers, such as Si LSI wafers, has also been proposed. The wafer bonding is thought to be a promising technique to implement optical interconnections between Si LSI chips.

• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Kamijoh Takeshi

  O Semiconductor Technology Laboratory Oki Electric Industry Co Ltd.

• WADA Hiroshi

  Optoelectronics Oki Laboratory, Real World Computing Partnership, c

• Wada Hiroshi

  Optoelectronics Oki Laboratory Real World Computing Partnership C

関連論文

• Effects of Heat Treatment on Bonding Properties in InP-to-Si Direct Wafer Bonding
• Wafer Bonding of InP to Si and Its Application to Optical Devices
• Wafer Bonding of InP to Si and its Application to Optical Devices
• Thermal Conductivity of Amorphous Silicon

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