Effects of Heat Treatment on Bonding Properties in InP-to-Si Direct Wafer Bonding
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概要
- 論文の詳細を見る
Effects of heat treatment on bonding properties, which include bonding strength, photoluminescence intensity, and electrical conduction through the interface, have been investigated in InP-to-Si direct wafer bonding for the first time. Bonding strength and electrical conduction were found to be improved by heat treatment. On the other hand, a degradation of photoluminescence intensity was observed with high-temperature treatment.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
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Kamijoh Takeshi
O Semiconductor Technology Laboratory Oki Electric Industry Co Ltd.
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Kamijoh Takeshi
O Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Wada H
Department Of Bioengineering And Robotics Tohoku University
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WADA Hiroshi
Optoelectronics Oki Laboratory, Real World Computing Partnership, c
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Wada Hiroshi
Optoelectronics Oki Laboratory Real World Computing Partnership C
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