Takahashi Hirokazu | Corporate Research And Development Laboratories Pioneer Corporation
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概要
関連著者
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Watanabe Akio
Ntional Institute Of Advanced Industrial Science And Technology
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Ota Hiroyuki
Corporate Research And Development Laboratories Pioneer Corporation
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Takahashi H
Corporate Research And Development Laboratories Pioneer Corporation
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TAKAHASHI Hirokazu
Corporate Research and Development Laboratories, Pioneer Corporation
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WATANABE Atsushi
Corporate Research and Development Laboratories, Pioneer Corporation
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CHIKUMA Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation
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Takahashi Hirokazu
Corporate Research And Development Laboratories Pioneer Corporation
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Takahashi Hisakazu
New Material Research Center Sanyo Electric Co. Ltd.
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Takahashi Hisanori
Technical Department Tokyo Institute Of Technology
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Watanabe Akiko
The Institute For Solid State Physics The University Of Tokyo
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Watanabe A
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Watanabe Akiyoshi
College Of General Education Tohoku University
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Chikuma K
Pioneer Corp. Saitama Jpn
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Chikuma Kiyofumi
Corporate R&d Laboratories Pioneer Corporation
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Takahashi Hirokazu
Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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TANAKA Toshiyuki
Corporate Research and Development Laboratories, Pioneer Corporation
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Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
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Tanaka T
Ceramic Operation Ibiden Co. Ltd.
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Tanaka Tooru
Faculty of Science and Technology, Meijo University
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Kimura Y
Ntt Access Network Systems Laboratories Optical Soliton Transmission Research Group
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KIMURA Yoshinori
Corporate Research and Development Laboratories, Pioneer Corporation
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MIYACHI Mamoru
Corporate Research and Development Laboratories, Pioneer Corporation
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Miyachi M
Corporate Research And Development Laboratories Pioneer Corporation
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Miyachi Mamoru
Corporate Research And Development Laboratories Pioneer Corporation
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Ito A
Nihon Univ. Chiba Jpn
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Itoh Akihiro
Department Of Physical Science Graduate School Of Engineering Science Osaka University:core Research
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ITO Atsuya
Corporate Research and Development Laboratories, Pioneer Corporation
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ITO Norikazu
Optical Device Research and Development Division, Rohm Company Limited
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TANABE Tetsuhiro
Optical Device Research and Development Division, Rohm Company Limited
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SONOBE Masayuki
Optical Device Research and Development Division, Rohm Company Limited
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AMANO Hiroshi
High-Tech Research Center, Meijo University
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KASHIMA Takayuki
High-Tech Research Center, Meijo University
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NAKAMURA Ryo
High-Tech Research Center, Meijo University
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AKASAKI Isamu
High-Tech Research Center, Meijo University
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NISHITSUKA Mitsuru
Corporate Research and Development Laboratories, Pioneer Electronic Corporation
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Nakamura Ryo
Department Of Electrical & Electronic Engineering Meljo University
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Kashima Takayuki
Department Of Materials Science And Engineering And Nano-factory Meijo University
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Ito Norikazu
Optical Device Research And Development Division Rohm Company Limited
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Sonobe Masayuki
Optical Device Research And Development Division Rohm Company Limited
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Tanabe Tetsuhiro
Optical Device Research And Development Division Rohm Company Limited
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Nishitsuka Mitsuru
Corporate Research And Development Laboratories Pioneer Electronic Corporation
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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Tanabe Tetsuhiro
Optical Device R&D Division, R0HM Corp., Ltd., 21 Mizosaki-cho, Saiin, Ukyo-ku, Kyoto 615-8585, Japan
著作論文
- Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing : Optics and Quantum Electronics
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition