Takahashi Hirokazu | Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan

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著作論文

Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing : Optics and Quantum Electronics
Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
High-Density Ferroelectric Recording Using Diamond Probe by Scanning Nonlinear Dielectric Microscopy
Recording and Reproduction in Ultrahigh-Density Ferroelectric Medium LiTaO3 through Lubricant Layer

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