InGaAsP/InP Laterally Coupled Distributed Feedback Ridge Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-03-30
著者
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CHIKUMA Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation
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Chen Nong
Corporate R&d Laboratories Pioneer Corporation
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WATANABE Yoshiaki
Corporate R&D Laboratories, Pioneer Corporation
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TAKEI Kiyoshi
Corporate R&D Laboratories, Pioneer Corporation
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Takei Kiyoshi
Corporate R&d Laboratories Pioneer Corporation
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Chikuma Kiyofumi
Corporate R&d Laboratories Pioneer Corporation
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Watanabe Yoshiaki
Corporate R&d Laboratories Pioneer Corporation
関連論文
- Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing : Optics and Quantum Electronics
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Second-Harmonic Generation of Blue Light in Epitaxial K_3Li_Nb_O_ Waveguides on K_3Li_(Nb_Ta_)_O_ Substrates by Metalorganic Chemical Vapor Deposition
- InGaAsP/InP Laterally Coupled Distributed Feedback Ridge Laser
- Effects of Absorption of Nonlinear Optical Crystal on Conversion Efficiency of Cerenkov-Radiation Type Second-Harmonic Generation in Crystal-Cored Fiber
- Fabrication of Periodic Domain-Inversion in X-cut LiTaO_3 by Heat Treatment Technique in an Electric Field
- Waveguiding Epitaxial Potassium Lithium Niobate Single-Crystal Films Deposited by Metalorganic Chemical Vapor Deposition
- AlGaInN/AlGaInP Two-Wavelength Laser Diodes Fabricated by Wafer-Level Transferring Technique