AlGaInN/AlGaInP Two-Wavelength Laser Diodes Fabricated by Wafer-Level Transferring Technique
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概要
- 論文の詳細を見る
An integrated two-wavelength laser diode (TWLD) which emits 405-nm-band and 650-nm-band laser beams from a single chip has been realized for the first time. The TWLD was fabricated by transferring a GaN-based laser diode (LD) onto an AlGaInP-based LD using a laser lift-off technique. Threshold currents in laser operations were 150 mA and 50 mA for the wavelengths of 403 nm and 652 nm, respectively. The GaN-based LD maintained its intrinsic property throughout the transfer onto the AlGaInP-based LD. The distance between two emission spots was approximately 6 μm. Such a close spot distance allows the optical components of the pickup to be substantially simplified.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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KIMURA Yoshinori
Corporate Research and Development Laboratories, Pioneer Corporation
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Miyachi Mamoru
Corporate Research And Development Laboratories Pioneer Corporation
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Chikuma Kiyofumi
Corporate R&d Laboratories Pioneer Corporation
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Chikuma Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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