Radiative Energy Transfer in GaN:Mg/Al_2O_3:Cr^<3+> Epitaxial Systems

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概要

• 論文の詳細を見る

• A photoluminescence study of undoped and Mg-doped GaN epitaxial layers grown by means of metalorganic vapor phase epitaxy (MOVPE) on sapphire (Al_2O_3) substrates is reported. In undoped n-type GaN the characteristic exciton emissions are observed near the band gap (E_g=3.47 eV). Mg-doped GaN shows a very strong blue donor-acceptor recombination band at about 3.2 eV. Only in these samples is a sharp line detected at 1.79 eV which is due to the characteristic R_<1,2> lines of Cr^<3+>(3d^3) trace impurities in the Al_2O_3 substrate. An obvious explanation for this effect is the very efficient radiative energy transfer from the GaN:Mg layer emitting blue photons into the absorption band ^4A_2→^4T_1 of Cr^<3+>(3d^3) trace impurities in the Al_2O_3 substrate.

• 社団法人応用物理学会の論文
• 1993-06-15

著者

• Akasaki Isamu

  Meijo University Department Of Electrical And Electronic Engineering

• AMANO Hiroshi

  Meijo University, Department of Electrical and Electronic Engineering

• Schneider J

  Kraton Polymers

• MAIER Karin

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• SCHNEIDER Jurgen

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• Akasaki Isamu

  Meijo University

• Amano Hiroshi

  Meijo University Department Of Electrical And Electronic Engineering

関連論文

• Stress and Defect Control in GaN Using Low Temperature Interlayers
• Present and Future Nitride-Based Devices
• GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
• Radiative Energy Transfer in GaN:Mg/Al_2O_3:Cr^ Epitaxial Systems
• 2nd JSAP Outstanding Achievement Award : Research Accomplishments

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