Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
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概要
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A p・ZnSnAs_2/n・ZnSe heterodiode was prepared by LPE from Sn solution on a low-resistivity n・ZnSe substrate. The I-V characteristics of the diode were measured, and it was found to have a good rectification ratio of 10^4 at 1 V. The diode showed a photoresponse extending over a wide wavelength region between 0.4 and 1.9 μm. The measurements of the C-V characteristics showed that the diode had an abrupt junction with a diffusion potential of 0.60 V. The dielectric constant for ZnSnAs_2 was first estimated from the analysis of the C-V characteristics: ε_A=12.0ε_0. The values of the minority carrier life-time were obtained from the decay curves of EBIC as 70 ns and 0.4 ns for n・ZnSe and P・ZnSnAs_2, respectively.
- 社団法人応用物理学会の論文
- 1983-10-20
著者
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NAKAU Tanehiro
Department of Electronics, University of Osaka Prefecture
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Nakau Tanehiro
Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture
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TAKENOSHITA Hiroshi
Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture
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Takenoshita Hiroshi
Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture
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