The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
スポンサーリンク
概要
- 論文の詳細を見る
Using a pnp Si Darlington Tr-chip as a specimen, images of electron-acoustic microscopy (EAM) and several modes of SEM images were observed in situ within the same area. The EAM was operated at a blanking frequency of 1 MHz and a duty ratio of 50%. In the EAM mode, the p-n junction, which was short-circuited to an Al electrode (〜3 μm) on the surface, was identified at HV ≧25kV. In the SEM mode, however, it was observed only as surface irregularity. The results were as follows: (1) the contrast of the EAM image varied with the bias condition, (2) the observable depth in EAM was related to the electron range, and (3) the depth corresponded to approximately 60% of the electron range. The results agreed with those previously reported using npn-type Tr-chips. A mechanism of acoustic signal generation is also discussed in this paper.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
-
Takenoshita Hiroshi
Department Of Electronics College Of Engineering University Of Osaka Prefecture
-
Takenoshita Hiroshi
Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture
関連論文
- Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy
- Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
- p-CuGa_In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution
- LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution
- Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
- The Hall Measurement of Heat-Treated CuInSe_2
- Preparation and some Properties of CuInSe_2 on ZnSe Heterojunction Grown by LPE : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
- Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution
- Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution
- Effective Range of Observable Depth by Electron-Acoustic Microscopy Using Two-Phase Electron Acoustic Signals : Ultrasonic Measurement
- Electron-Acoustic Microscopic Study on Dislocation Lines in the Base Region of npn Si-Tr : Ultrasonic Microscopy and Nondestructive Testing
- Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
- Site of Electron Acoustic Signal Generation from Junction of an npn Si Transistor-Chip under Bias Application : Physical Acoustics
- Depth Directional Study by Electron-Acoustic Microscopy : Photoacoustic Spectroscopy and Ultrasonic Microscopy
- Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
- Nondestructive Profiling of Transistor-Chip under Bias Application by Electron-Acoustic Microscopy : Ultrasonic Imaging and Microscopy
- Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
- Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
- The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
- Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
- A Study of Silicon Transistor-Tip by Electron-Acoustic Microscopy
- LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute