Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-06-20
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関連論文
- Nondestructive Internal Observation and Distribution of Potential with Bias Application of npn Si Darlington Transistor Chip Using Electron-Acoustic Microscopy
- Observation of Dislocation Lines in a Transistor by Electron-Acoustic Microscopy : Acoustical Measurements and Instrumentation
- p-CuGa_In_xS_2/n-ZnSe Heterojunction by LPE Method from In Solution
- LPE Growth of ZnSnAs_2 on a ZnSe Substrate from a Sn Solution
- Electrical and Optical Properties of p・ZnSnAs_2/n・ZnSe Heterodiode
- The Hall Measurement of Heat-Treated CuInSe_2
- Preparation and some Properties of CuInSe_2 on ZnSe Heterojunction Grown by LPE : CHALCOPYRITES : THIN FILMS AND JUNCTIONS
- Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution
- Heteroepitaxy of CuInS_2 on ZnSe by LPE Method from In Solution
- Effective Range of Observable Depth by Electron-Acoustic Microscopy Using Two-Phase Electron Acoustic Signals : Ultrasonic Measurement
- Electron-Acoustic Microscopic Study on Dislocation Lines in the Base Region of npn Si-Tr : Ultrasonic Microscopy and Nondestructive Testing
- Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
- Site of Electron Acoustic Signal Generation from Junction of an npn Si Transistor-Chip under Bias Application : Physical Acoustics
- Depth Directional Study by Electron-Acoustic Microscopy : Photoacoustic Spectroscopy and Ultrasonic Microscopy
- Contrast of Electron-Acoustic Microscopic Image : For Si Tr-Chip under Bias Application : Ultrasonic Imaging and Microscopy
- Nondestructive Profiling of Transistor-Chip under Bias Application by Electron-Acoustic Microscopy : Ultrasonic Imaging and Microscopy
- Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
- Generation of Electron-Acoustic Signals and Distribution of Potential in Transistor Chip under Applied of Bias
- The Range of Observable Depth in a pnp Si Darlington Tr-Chip by Electron-Acoustic Microscopy : Mechanical and Scoustical Properties
- Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM) : Ultrasonic Imaging and Microscopy
- A Study of Silicon Transistor-Tip by Electron-Acoustic Microscopy
- LPE Growth of CuGa_In_xS_2 on ZnSe Substrate Using a Mixture of CuGaS_2 and CuInS_2 as a Solute