Liquid Phase Epitaxial Growth of CuGaTe_2 on ZnSe from Bi Solution

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概要

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• A CuGaTe_2 layer was grown on ZnSe by liquid phase epitaxy from Bi solution. This combination produced a large lattice misfit and considerable lattice distortion. The optimum growth conditions were as follows: a maximum temperature of 530℃, a cooling rate of 0.5℃/min and the substrate orientation ZnSe(111)_<Se>. The epitaxial growth was confirmed by electron diffraction, and the results of Hall measurements at 300 K gave σ=12.5Ω^<-1>-cm^<-1>, μ_H=33.0cm^2/Vs and N_A=2.40×10^<18>cm^<-3>. From EPMA, (CuGaTe_2)_<1-x>-(2ZnSe)_x alloys were found to form a solid solution. The thickness of the mixed crystal layer was 1.0 μm.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• IMAI Susumu

  Department of Oral Health, National Institute of Public Health

• Imai Susumu

  Department Of Electronics College Of Engineering University Of Osaka Prefecture

• NAKAU Tanehiro

  Department of Electronics, University of Osaka Prefecture

• Nakau Tanehiro

  Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture

• TAKENOSHITA Hiroshi

  Department of Electronics, College of Engineering, Urtiversity of Osaka Prefecture

• NISHIRA Masatoshi

  Department of Electronics, College of Engineering, University of Osaka Prefecture

• Takenoshita Hiroshi

  Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture

• Nishira Masatoshi

  Department Of Electronics College Of Engineering University Of Osaka Prefecture

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