Site of Ultrasonic Signal Generation from a Junction of a Transistor-Chip by Excitation of the Chopped Electron Beam
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概要
- 論文の詳細を見る
An npn Si transistor-chip specimen was angle-lapped so that the junction between the base(B) and collector(C) was exposed to the microscopic field. Bias voltage was applied between the C and emitter electrodes, and the B was kept open. Photographs of the SEM and electron-acoustic microscopy were compared with the X-Y recorder charts. When compared under several bias conditions, the site of EAM signal generation stayed almost unchanged in spite of the variation of bias voltage. On the other hand, the site of electron-beam-induced current signal generation spread in response to the variation of bias condition.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Kobayashi Mutsuo
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Takenoshita Hiroshi
Deparment Of Elctronics College Of Engineering University Of Osaka Prefecture
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