Redistribution of P in Si by Ar Ion Hot Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-07-05
著者
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Nagami Koichi
Department Of Electronics College Of Engineering University Of Osaka Prefecture
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Nagami Koichi
Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture
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Takeda Tadao
Department Of Physics University Of Osaka Prefecture
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Takeda Tadao
Department Of Electronics College Of Engineering University Of Osaka Prefecture:(present Address) Mu
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MORIKAWA Yasumitsu
Department of Electronics, College of Engineering, University of Osaka Prefecture
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Morikawa Yasumitsu
Department Of Electronic Engineering College Of Engineering University Of Osaka Prefecture
関連論文
- Magnetic Anisotropy of Single Crystals of NiO and MnO
- Thermal Pits of NiO Crystals
- Redistribution of P in Si by Ar Ion Hot Implantation
- Observation of Antifferromagnetic Domains in Nickel Oxide
- Chemical Etch Pits of NiO Crystal Annealed at High Temperature
- X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses
- Remarks on the Vacancy Mechanisms in Ion Implantation