Grazing Incident X-Ray Topographs of Heteroepitaxial ZnSe Films on GaAs Substrates
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概要
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Surface reflection topographs of heteroepitaxial ZnSe films on GaAs substrates were obtained using grazing incident synchrotron X-ray radiation. The topographs indicated that diffraction occurred only in the ZnSe epilayer because no misfit dislocations within the interface were visible. Furthermore, the lattice perfection of the ZnSe epilayer was lower than that of the GaAs substrate, although strain relaxation arose due to the nucleation of misfit dislocations.
- 2004-03-01
著者
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Prete Paola
Ime-cnr
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Lovergine Nico
Infm And Department Of Innovation Engineering University Of Lecce
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FUJIKI Fumiaki
Department of Material Science, Faculty of Science and Engineering, Shimane University
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Mizuno Kaoru
Department Of Material Science Faculty Of Science And Engineering Shimane University
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Okamoto Hiroyuki
Department Of Agricultural Chemistry Kyoto University
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Mizuno Kaoru
Department of Material Science, Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
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Fujiki Fumiaki
Department of Material Science, Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
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Okamoto Hiroyuki
Department of Health Science, School of Medicine, Kanazawa University, 5-11-80 Kodatsuno, Kanazawa 920-0942, Japan
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