Low-Energy Focused Ion Beam Doping during Molecular Beam Epitaxial Growth for the Fabrication of Three-Dimensional Devices: The Effect of Dopant Surface Segregation

概要

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An extreme example of surface segregation is found in Sn-doped GaAs grown by molecular beam epitaxy (MBE).Abrupt changes in the doping profile are not possible, instead the dopant concentration decreases exponentially towards the wafer surface from the point at which doping was terminated. In this work it is shown that segregation can be suppressed by implanting the Sn from a very-low-energy (50 to 300 eV) ion beam, during growth. The effect of ion implantation energy is studied using secondary ion mass spectroscopy (SIMS) to measure the depth profile of the implanted Sn. It is found that the level of incorporation can be increased by up to a factor of eight using a 300 eV ion energy.
社団法人応用物理学会の論文
1995-08-30