Properties of a Monolithic Electroacoustic Device Geometry Using GaAs Resonant Tunnelling Structures

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• Pepper Michael

  Cavendish Laboratory University Of Cambridge

• HUTCHINSON Alexander

  Cavendish Laboratory, University of Cambridge

• TALYANSKII Valery

  Cavendish Laboratory, University of Cambridge

• HARRELL Ruth

  Cavendish Laboratory, University of Cambridge

• LINFIELD Edmund

  Cavendish Laboratory, University of Cambridge

関連論文

• Properties of a Monolithic Electroacoustic Device Geometry Using GaAs Resonant Tunnelling Structures
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• Coulomb Charging Effects in an Open Quantum Dot Device at Zero Magnetic Field
• Properties of a Monolithic Electroacoustic Device Geometry Using GaAs Resonant Tunnelling Structures

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