Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
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概要
- 論文の詳細を見る
Defect levels produced in n-type germanium by 1.5 MeV electron irradiation and their annealing behaviour were studied by DLTS. Two electron traps located at E_C-0.20 eV and E_C-0.40 eV and a hole trap at E_V+0.24 eV were found to be formed by the irradiation with introduction rates of 0.05/cm, 0.54/cm and 0.22/cm respectively. When the specimen was annealed at 370 K for 10 minutes, a considerable part of the E_C-0.20 eV level was observed to be transformed into a new electron trap at E_C-0.23 eV.
- 社団法人応用物理学会の論文
- 1981-07-05
著者
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SAITO Haruo
Department of Radiological Technology, School of Health Sciences, Faculty of Medicine
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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Saito Haruo
Department Of Drug Evaluation And Toxicological Sciences Faculty Of Pharmaceutical Sciences Chiba Un
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