An Annealing Stage near 4.2 K in Neutron Irradiated Germanium

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-01-05

著者

• Tagawa Seiichi

  Nuclear Engineering Research Lab. Fac. Of Engineering Univ. Of Tokyo

• Saito Haruo

  College Of General Education Osaka University

• Tagawa Seiichi

  Nuclear Engineering Research Laboratory Faculty Of Engineering The University Of Tokyo

• Tatsumi Yukichi

  College Of General Education Osaka University

• Fukuoka Noboru

  College Of General Education Osaka University

• Fukuoka Noboru

  Department Of Physics College Of General Education Osaka Univ.

• HIRATA Mitsuji

  College of General Education, Osaka University

• SASUGA Norihiko

  Nuclear Engineering Research Laboratory, Faculty of Engineering, The University of Tokyo

• Hirata Mitsuji

  College Of General Education Osaka University

• Sasuga Norihiko

  Nuclear Engineering Research Laboratory Faculty Of Engineering The University Of Tokyo

• Saito Haruo

  Department Of Physics College Of General Education Osaka Univ.

関連論文

• Property of Radiation-Induced Defects in Germanium Single Crystals
• Radiation Defects in Thermal-Donor-Doped Silicon
• Radiation Defects Produced by Neutron Irradiation in Germanium Single Crystals
• Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium
• Effects of Carbon Atoms on the Defects in Czochralski-Grown Silicon Formed by Annealing
• Defects Produced in Germanium by Quenching and Electron Irradiation
• Point Defects in Cubic Boron Nitride after Neutron Irradiation
• Electron Paramagnetic Center in Neutron-Irradiated AlN
• F-Type Centers in Neutron-Irradiated AIN
• An Annealing Stage near 4.2 K in Neutron Irradiated Germanium
• Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
• The E_c-0.2 eV Level in Irradiated n-Type Germanium
• Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
• 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
• Temperature Dependence of the Lifetime of the 1Σ^+_u State of STE in KI, NaCl, KBr and RbBr Crystals
• Formation Time of STE at ^1Σ^+_u State in RbBr and KI under Pulsed Electron Beam in Picosecond Range
• Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
• Nature of Radiation Defects in Silicon Single Crystals
• Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
• Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons
• Oxygen-Related Defects in Irradiated Germanium
• Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium
• Annealing of Self-Interstitials in Germanium
• New Donor Formation in n-Type Czochralski-Grown Silicon
• Thermal Donor Formation and the Effect of Copper Contamination in Oxygen-Doped Germanium : Semiconductors and Semiconductor Devices
• The Defects Produced by Electron Irradiation and Annealed at About 360K in n-Type Germanium
• Annealing of E Center in Irradiated Silicon
• Radiation Induced Defects in Germaniumt Single Crystals of High Purity
• Defects in Carbon-Implanted Silicon
• Defects in Neutron-Transmutation-Doped Germanium
• Radiation field for fisson neutron enhanced boron neutron capture therapy employing fast neutron source reactor "YAYOI".

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