Thermal Donor Formation and the Effect of Copper Contamination in Oxygen-Doped Germanium : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
The structure of thermal donors in germanium was studied in oxygen-doped crystal(9×10^<16> oxygens/cm^3). From the reduction of interstitial oxygen concentration after annealing, it was found that a single thermal donor contains three oxygen atoms on average. The diffusion of copper atoms from the surface in oxygens-doped germanuim crystal was studied through electron irradiation effects. It was revealed that a copper atom migrates as an interstitial atom and it occupies a substitutional site at about 450℃.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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FUKUOKA Noboru
Department of Physics, Faculty of Science, Naruto University of Education
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MATSUDA Koji
Osaka Laboratory for Radiation Chemistry, Japan Atomic Energy Research Institute
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Fukuoka Noboru
Department Of Physics Faculty Of Science Naruto University Of Education
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Fukuoka Noboru
Department Of Physics College Of General Education Osaka Univ.
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TABUCHI Mitsuru
Department of Physics, Faculty of Science, Naruto University of Education
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Tabuchi Mitsuru
Department Of Physics Faculty Of Science Naruto University Of Education
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Matsuda Koji
Osaka Laboratory For Radiation Chemistry Japan Atomic Energy Research Institute
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Matsuda Koji
Osaka Laboratories Japanese Association For Radiation Research On Polymers
関連論文
- Property of Radiation-Induced Defects in Germanium Single Crystals
- Radiation Defects in Thermal-Donor-Doped Silicon
- Radiation Defects Produced by Neutron Irradiation in Germanium Single Crystals
- Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium
- Effects of Carbon Atoms on the Defects in Czochralski-Grown Silicon Formed by Annealing
- Defects Produced in Germanium by Quenching and Electron Irradiation
- Point Defects in Cubic Boron Nitride after Neutron Irradiation
- Electron Paramagnetic Center in Neutron-Irradiated AlN
- F-Type Centers in Neutron-Irradiated AIN
- An Annealing Stage near 4.2 K in Neutron Irradiated Germanium
- Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
- The E_c-0.2 eV Level in Irradiated n-Type Germanium
- Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
- 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
- Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
- Radiation Defects in n-Type Germanium Studied by Deep Level Transient Spectroscopy
- Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons
- Oxygen-Related Defects in Irradiated Germanium
- Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium
- Annealing of Self-Interstitials in Germanium
- New Donor Formation in n-Type Czochralski-Grown Silicon
- Thermal Donor Formation and the Effect of Copper Contamination in Oxygen-Doped Germanium : Semiconductors and Semiconductor Devices
- The Defects Produced by Electron Irradiation and Annealed at About 360K in n-Type Germanium
- Thermoluminescence of Irradiated Polyethylene
- Radiation Induced Defects in Germaniumt Single Crystals of High Purity
- Defects in Carbon-Implanted Silicon
- Defects in Neutron-Transmutation-Doped Germanium
- Characteristics of ethacrynic acid highly sensitive Mg2+-ATPase in microsomal fractions of the rat brain : Functional molecular size, inhibition by SITS and stimulation by Cl-.