Formation Time of STE at ^1Σ^+_u State in RbBr and KI under Pulsed Electron Beam in Picosecond Range

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概要

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• The growth times (r:) of the o omission intensity in RbBr and Kl crystalshave been obtained to be 10.1:l:10 ps and 585 ps, respectively, unde:r irradiation ofa pulsed electron beam with the pulse duration of about 18 ps near liquid heliumtemperature. r9 includes both the life time of the conduction electron and therelaxation time of electrons from the conduction band down to fate "I: (o., 2so.)state of the self trapped exciton. rg is discussed in connection witlx the formationmechanism of the F-H center pair. The decay times (r:) of the emission intensityin these crystals are 3.3f0.l ns and 1.6.40.1 ns, respectively, in g?ood agreementwith those observed by using a pulsed proton beam with nsec pulse duration byBlair et at.

• 社団法人日本物理学会の論文
• 1980-07-15

著者

• Tagawa Seiichi

  Nuclear Engineering Research Lab. Fac. Of Engineering Univ. Of Tokyo

• Suzuki Yoshiro

  Department Of Biological Science Tokyo Institute Of Technology

• Suzuki Yoshiro

  Department Of Applied Physics Faculty Of Engineering Tohoku University

• HIRAI Masamitsu

  Department of Applied Physics,Faculty of Engineering,Tohoku University

• Hirai Masamitsu

  Department Of Applied Physics Faculty Of Engineering Tohoku University

• Wakita Shohei

  Department of Physics, College of General Education , Tohoku University

• Ohtani Hirofumi

  Department of Applied Physics, Fac. Of Engineering, Tohoku University

• Ohtani Hirofumi

  Department Of Applied Physics Fac. Of Engineering Tohoku University

• Wakita Shohei

  Department Of Physics College Of General Education Tohoku University

• Suzuki Yoshiro

  Department of Applied Physics, Faculty of Engineering,Tohoku University

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