Measurement of Young's Modulus in Amorphous Silicon Whiskers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-08-05

著者

• Tatsumi Yukichi

  Department Of Physics College Of General Education Osaka University

• HIRATA Mitsuji

  Department of Physics,College of General Education,Osaka University

• Hirata Mitsuji

  Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University

• SHIGI Mikio

  Department of Metal Physics, Faculty of Engineering Science, Osaka University

関連論文

• Crystallization of Amorphous Si and Ge Whiskers
• Annealing of Defects Formed in Germanium After Irradiations with Particles of Various Energies
• The E_c-0.2 eV Level in Irradiated n-Type Germanium
• Shallow Traps in p-Type Germanium Converted from n-Type by Electron Irradiation
• 80°K -140°K Annealing Stage of p-Type Germanium after Irradiation with 1.5 Me V Electrons at 77°K
• Possibility of Di-Vacancy Migration at 0℃ in Irradiated Germanium
• Annealing of Irradiated Silicon Containing Phosphorus Atoms
• Effects of Gamma Irradiation on Minority Carrier Lifetime in Germanium Single Crystals
• Acceptor Impurity Associated Dffects in Silicon
• Recovery Stages by Lifetime Measurements in Irradiated P-Type Silicon
• Characteristics of Whisker Growth in Amorphous Silicon
• Visual Observation of Whisker Growth in Amorphous Silicon
• Measurement of Young's Modulus in Amorphous Silicon Whiskers
• Growth of Amorphous Germanium Whiskers
• Recovery Spectra of Conductivity and Carrier Lifetime in Germanium Bombarded with Electrons of 1.5 MeV or Co 60 Gamma Rays
• Recovery Spectra of N-Type Germanium Bombarded with Electrons of 1.5 MeV at 77 K
• Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor
• Amorphous Silicon Fibers Grown by Thermal Decomposition of SiH_4
• Reverse Annealing Stage in Irradiated Germanium Containing Arsenic
• Growth of Amorphous Silicon Fibers
• Transmission Electron Diffraction Pattern of Electron-Irradiation-Induced {113}-Faulted Loops in Si
• Electron-Bombardment Induced Annealing Stages in N-Type Germanium I
• Role of Agents in Filamentary Growth of Amorphous Silicon
• The Interactions of Point Defects with Impurities in Silicon
• Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
• Growth of New Form Germanium Whiskers
• Vacancy Capture Radii of Impurity Atoms in Silicon
• Electron-Bombardment Induced Annealing Stages in n-Type Germanium II

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