Visual Observation of Whisker Growth in Amorphous Silicon
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概要
- 論文の詳細を見る
Amorphous silicon whiskers have been grown in an atmosphere composed ofSin. (5 %) and argon (95 %) at around 650'C. Time-lapse sequence of the growthof whiskers is presented in this report. By using an optical system, it has beenobserved that the growth proceeds at their tips.
- 社団法人日本物理学会の論文
- 1978-08-15
著者
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Tatsumi Yukichi
Department Of Physics College Of General Education Osaka University
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HIRATA Mitsuji
Department of Physics,College of General Education,Osaka University
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Hirata Mitsuji
Department Of Physics Boston College:(permanent Address)department Of Physics Osaka University
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SHIGI Mikio
Department of Metal Physics, Faculty of Engineering Science, Osaka University
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- Electron-Bombardment Induced Annealing Stages in N-Type Germanium I
- Role of Agents in Filamentary Growth of Amorphous Silicon
- The Interactions of Point Defects with Impurities in Silicon
- Diffusion Process of Interstitial Atoms in an Electron Irradiated InP Studied by Transmission Electron Microscopy
- Growth of New Form Germanium Whiskers
- Vacancy Capture Radii of Impurity Atoms in Silicon
- Electron-Bombardment Induced Annealing Stages in n-Type Germanium II