Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
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概要
- 論文の詳細を見る
Structure and thermal behavior of lattice defects in silicon induced by excimer laser irradiation, which is expected to be adopted as a new extrinsic gettering technique, were examined by transmission electron microscopy. Stacking fault tetrahedra and a peculiar type of dislocations which appeared in a V-shape were found in a melted and regrown layer of an as-irradiated sample. After subsequent heat treatment, slip dislocations were generated from the traces of laser beam shot and the stacking fault tetrahedra were mostly transformed into the V-shaped dislocations. These V-shaped dislocations were proved to be thermally stable and were expected to work as effective extrinsic gettering centers.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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SAKAI Akira
Fundamental Research Laboratories, NEC Corporation
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Ono Haruhiko
Fundamental Research Laboratories Nec Corporation
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Matsui Junji
Fundamental Research Laboratories Nec Corporation
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Ohshita Yoshio
Fundamental Research Laboratories Nec Corporation
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Sakai Akira
Fundamental Research Laboratories Nec Corporation
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