Influence of In Atoms on the Shape of Dislocation Etch Pits in LEC In-Doped GaAs Crystals
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概要
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The shapes of dislocation etch pits formed by molten KOH on {001} LEC GaAs crystal wafers doped with various degrees of In content were investigated. The pit shape was found to change depending on the amount of the doped In. The geometrical relation between the pit shapes and the direction of the composed pit walls is discussed. The formation mechanism of each wall is examined microscopically regarding the explanation of the pit-shape variation. The pit-shape variation is interpreted to be due to an increase in the etch rate in only the Ga {111} planes; this is caused by the In atoms substituting the Ga atoms.
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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Ono Haruhiko
Fundamental Research Laboratories Nec Corporation
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Matsui Junji
Fundamental Research Laboratories Nec Corporation
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