Fluorescence EXAFS Study of Zn-Doped LEC InP Crystal : Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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Watanabe Hisao
Fundamental Research Laboratories Nec Corporation
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Matsui Junji
Fundamental Research Laboratories, NEC Corporation
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Watanabe H
Fundamental Research Laboratories Nec Corporation
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KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
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Kitano Tomohisa
Fundamental Research Laboratories Nec Corporation
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Kitano Tomohisa
Fundamental Reseach Laboratories Nec Corporation
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Matsui Junji
Fundamental Research Laboratories Nec Corporation
関連論文
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Fluorescence EXAFS Study of Zn-Doped LEC InP Crystal : Condensed Matter
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Generation of Slip Dislocations during Czochralski Growth of Semiconductor Crystals Pullen in a Axis
- Structure Characterization of Fe-B Amorphous Alloys by a Laboratory EXAFS Spectrometer
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities
- Appropriate Pulling Axis Orientation to Suppress Slip Dislocation Generation during Czochralski Growth of Semiconductor Crystals : Condensed Matter
- Influence of In Atoms on the Shape of Dislocation Etch Pits in LEC In-Doped GaAs Crystals
- Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
- Cathodoluminescence Study of Striation in In-Doped LEC GaAs Crystals
- Amphoteric Doping in Si-Implanted Undoped or In-Doped Czochralski GaAs