Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal
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概要
- 論文の詳細を見る
For the undoped semi-insulating LEC GaAs crystal, microscopic inhomogeneity was investigated on the fixed position by using cathodoluminescence (CL), secondary ion mass spectrometry (SIMS), X-ray topography (XRT) and scanning leakage current measurement (I_L). Microscale fluctuations observed in these measurements were attributed to the cellular dislocation structures. It was suggested that the impurity gettering effect of dislocation plays an important role in the semi-insulation mechanism in GaAs crystal. Carriers are inactive in the boundary region of cell structures but are active in the inner region of cell structures.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Matsui J
Himeji Inst. Technol. Hyogo Jpn
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Shimura Fumio
Basic Technology Research Laboratories Nippon Electric Co. Ltd.
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Kamejima Taibun
Analysis And Evaluation Technology Center Nec Corporation
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Matsumoto Yoshishige
Basic Technology Research Laboratories Nippon Electric Co. Ltd.
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KAMEJIMA Taibun
Basic Technology Research Laboratories, Nippon Electric Co., Ltd.
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WATANABE Hisao
Basic Technology Research Laboratories, Nippon Electric Co., Ltd.
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MATSUI Junji
Basic Technology Research Laboratories, Nippon Electric Co., Ltd.
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