Saito Shuichi | Ulsi Device Development Laboratories Nec Corporation

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著作論文

Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate

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