Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) : Investigation of the Crystallographic Structure
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Tanaka Masahiro
R&d Group Wacker Nsce Corporation
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Ikari A
Wacker Nsce Corp. Yamaguchi Jpn
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Ikari Atsushi
Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo
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Ikari Atsushi
R&d Group Wacker Nsce Corporation
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Kitahara Koichi
R&d Group Wacker Nsce Corporation
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Ikari A
R&d Group Wacker Nsce Corporation
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Nakai Katsuhiko
R&d Group Wacker Nsce Corporation
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Ohta Yasumitsu
R&d Group Wacker Nsce Corporation
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NAKAI Katsuhiko
R&D Group, Wacker NSCE Corporation
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KITAHARA Koichi
R&D Group, Wacker NSCE Corporation
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OHTA Yasumitsu
R&D Group, Wacker NSCE Corporation
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IKARI Atsushi
R&D Group, Wacker NSCE Corporation
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TANAKA Masahiro
R&D Group, Wacker NSCE Corporation
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Kitahara K
R&d Group Wacker Nsce Corporation
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- Influence of Atmosphere on Molten Silicon Density
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- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
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- Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) : Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping
- Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (I) : Investigation of the Crystallographic Structure
- In Situ Observation of Etching Processes of Silica Glasses by Silicon Melts
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Epitaxial Growth of 3C-SiC on Si(111) Using Hexamethyldisilane and Tetraethylsilane