Epitaxial Growth of 3C-SiC on Si(111) Using Hexamethyldisilane and Tetraethylsilane
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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TSUDA Hiroshi
Department of Materials Science, Graduate School of Engineering, Osaka Prefecture University
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Tsuda Hiroshi
Department Of Electronics Doshisha University
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Kubo Naoki
Department of Nuclear Medicine, Hokkaido University Graduate School of Medicine
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Kitahara Koichi
R&d Group Wacker Nsce Corporation
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Kitahara Kuninori
Department Of Electronic And Control Systems Engineering Shimane University
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Kubo Naoki
Department Of Electronic And Control Systems Engineering Shimane University
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MORITANI Akihiro
Department of Electronic and Control Systems Engineering, Shimane University
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ASAHINA Shuichi
Shimane Institute for Industrial Technology
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KANAYAMA Nobuyuki
Shimane Institute for Industrial Technology
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KAWASE Takeshi
Sumitomo Osaka Cement Co., Ltd.
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Kitahara Kuninori
Department Of Electronic And Control System Eng. Shimane University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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Kawase Takeshi
Sumitomo Osaka Cement Co. Ltd.
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Moritani Akihiro
Department Of Electronic And Control Systems Engineering Shimane University
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Tsuda Hiroshi
Department Of Elctronics Doshisha University
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Tsuda Hiroshi
Department Of Metallurgy And Materials Science Graduate School Of Engineering Osaka Prefecture University
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