Phonon-Assisted Tunneling in Bi_2Te_3 through RF Sputtered SiO_2 Films
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概要
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We have obtained phonon energies of p-Bi_2Te_3 from phonon-assisted electron tunneling through rf sputtered SiO_2 films. The obtained energy values of the phonons are 12±1 meV, 14±1 meV, and 17±1 meV. The observed structures in d^2I/dV^2-vs-V curves are found to be very similar to the calculated phonon density-of-states curve. It is shown from these tunneling measurements that the rf sputtered SiO_2 film is applicable to the MIS tunnel junctions as a potential barrier.
- 社団法人応用物理学会の論文
- 1976-08-05
著者
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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FUJIOKA Masanobu
Department of Electronics, Faculty of Engineering, Osaka University
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Fujioka Masanobu
Department Of Electronics Faculty Of Engineering Osaka University
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