Exciton Absorption Spectrum in ZnSiP_2 Crystal
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概要
- 論文の詳細を見る
The precise measurements of absorption coefficients near the pseudodirect band edge in ZnSiP_2 have been performed using the polarized light at 2 K. The absorption peak for the excited state (n=2) of A' exciton has for the first time been observed at 2.143 eV with the light polarized perpendicular to c-axis (E⊥c). Using the photon energies of A'_<n=1> exciton peak (ground state) and A'_<n=2> peak, the exciton binding energy and the reduced mass were determined to be 27 meV and 0.224m_0, respectively. These values are slightly larger than those obtained theoretically.
- 社団法人応用物理学会の論文
- 1980-10-05
著者
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Okamura Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Nakai Junkichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shirakawa Tsuguru
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nishida Hideki
Laboratory Of Polytechnics Faculty Of Education Tottori University
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