Exciton Absorption Spectrum in ZnSiP_2 Crystal
スポンサーリンク
概要
- 論文の詳細を見る
The precise measurements of absorption coefficients near the pseudodirect band edge in ZnSiP_2 have been performed using the polarized light at 2 K. The absorption peak for the excited state (n=2) of A' exciton has for the first time been observed at 2.143 eV with the light polarized perpendicular to c-axis (E⊥c). Using the photon energies of A'_<n=1> exciton peak (ground state) and A'_<n=2> peak, the exciton binding energy and the reduced mass were determined to be 27 meV and 0.224m_0, respectively. These values are slightly larger than those obtained theoretically.
- 社団法人応用物理学会の論文
- 1980-10-05
著者
-
Okamura Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Nakai Junkichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Shirakawa Tsuguru
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Nishida Hideki
Laboratory Of Polytechnics Faculty Of Education Tottori University
関連論文
- The effect of light penetration on the adhesive properties of post-core materials to root canal dentin
- Association of 14-3-3 ε gene haplotype with completed suicide in Japanese
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS