Observation of Luminescent Lines Related to Pseudodirect Gap in ZnSiP_2 Crystals
スポンサーリンク
概要
- 論文の詳細を見る
The photoluminescence of ZnSiP_2 crystals has been measured at 4.2 K. New sharp emission lines were observed at about 1.980 eV in a sample annealed at 400℃ in vacuum. The intensity of these lines is greatly enhanced by excitation at the exciton absorption peak associated with the pseudodirect gap. This indicates that these emission lines are due to the bound excitons associated with the pseudodirect gap, in contrast to the results of previous photoluminescence measurements suggesting that this crystal is an indirect-gap semiconductor.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
-
Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Nakai Junkichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Shirakawa Tsuguru
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Konishi Masaya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Nishida Hideki
Laboratory Of Polytechnics Faculty Of Education Tottori University
関連論文
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique
- Electroreflectance of Anodized n-GaAs MOS
- Electroabsorption of GaS around the Indirect Edge
- Photoluminescence Spectra in ZnSiP_2 Crystals
- Exciton Absorption Spectrum in ZnSiP_2 Crystal
- Electrostriction and Piezoelectricity of Thermally Grown SiO_2 and Sputtered SiO_2 Films
- Electroreflectance of Si-MOS
- Observation of Conductance Anomalies in Pb-SiO_2-Au Tunnel Junctions
- Reflectance and Wavelength-Modulated Reflectance Measurements by a Double Beam-Single Detector System
- Ellipsometry and Reflectance of Etched (100) Surfaces of Undoped, Semi-Insulating LEC GaAs
- Phonon-Assisted Tunneling in Bi_2Te_3 through RF Sputtered SiO_2 Films
- Study of Anodic Film Growth on GaAs and Bi_2Te_3 by in situ Photoacoustic Technique
- Observation of Anodic Film Growth of Bi_2Te_3 by in situ Photoacoustic Technique
- Effect of CW-Laser Irradiation on Interface Properties of Anodized GaAs-MOS
- Schottky-Barrier Electroreflectance Measurements in GaAs by a Sample Rotating Technique
- Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
- Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors
- Some Properties of Silica Film Made by RF Glow Discharge Sputtering
- Observation of Luminescent Lines Related to Pseudodirect Gap in ZnSiP_2 Crystals
- Observation of Landau Levels and Two-Dimensional Energy Bands in CdSnAs_2 by Electron Tunneling : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- A Measurement of Doping Inhomogeneity by Low-Field Electroreflectance