Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-05-05
著者
-
Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Moritani Akihiro
Department Of Electronics Faculty Of Engineering Osaka University
-
Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
-
SHIMANO Akio
Department of Electronics, Faculty of Engineering, Osaka University
-
Shimano Akio
Department Of Electronics Faculty Of Engineering Osaka University
関連論文
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- Epitaxial Growth of 3C-SiC on Si(111) Using Hexamethyldisilane and Tetraethylsilane
- Electroreflectance of Anodized n-GaAs MOS
- Electroabsorption of GaS around the Indirect Edge
- Photoluminescence Spectra in ZnSiP_2 Crystals
- Exciton Absorption Spectrum in ZnSiP_2 Crystal
- Electrostriction and Piezoelectricity of Thermally Grown SiO_2 and Sputtered SiO_2 Films
- Electroreflectance of Si-MOS
- Observation of Conductance Anomalies in Pb-SiO_2-Au Tunnel Junctions
- Reflectance and Wavelength-Modulated Reflectance Measurements by a Double Beam-Single Detector System
- Ellipsometry and Reflectance of Etched (100) Surfaces of Undoped, Semi-Insulating LEC GaAs
- Phonon-Assisted Tunneling in Bi_2Te_3 through RF Sputtered SiO_2 Films
- Study of Anodic Film Growth on GaAs and Bi_2Te_3 by in situ Photoacoustic Technique
- Observation of Anodic Film Growth of Bi_2Te_3 by in situ Photoacoustic Technique
- Effect of CW-Laser Irradiation on Interface Properties of Anodized GaAs-MOS
- Schottky-Barrier Electroreflectance Measurements in GaAs by a Sample Rotating Technique
- Photoacoustic Spectroscopy Theory for Multi-Layered Samples and Interference Effect
- Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors
- Some Properties of Silica Film Made by RF Glow Discharge Sputtering
- Observation of Luminescent Lines Related to Pseudodirect Gap in ZnSiP_2 Crystals
- Observation of Landau Levels and Two-Dimensional Energy Bands in CdSnAs_2 by Electron Tunneling : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- A Measurement of Doping Inhomogeneity by Low-Field Electroreflectance
- Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources
- Investigation of Surface Damage in Si Exposed to Ar Plasma by Spectroscopic Ellipsometry and Grazing X-Ray Diffraction