Ellipsometry and Reflectance of Etched (100) Surfaces of Undoped, Semi-Insulating LEC GaAs
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概要
- 論文の詳細を見る
It is demonstrated that ellipsometry combined with reflectance measurement provides useful information on the distribution of each pits due to crystal defects on the (100) surface of undoped, semi-insulating LEC GaAs etched with molten KOH.
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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HOSHINO Takashi
Department of Agricultural Chemistry, Faculty of Agriculture, Tohoku University
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Nakai J
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nakai Junkichi
Department Of Electronics Faculty Of Engineering Osaka University
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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Hoshino Takashi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hoshino Takashi
Department Of Agricultural Chemistry Faculty Of Agriculture Tohoku University:(present Address)niiga
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