Study of Anodic Film Growth on GaAs and Bi_2Te_3 by in situ Photoacoustic Technique
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概要
- 論文の詳細を見る
Anodic film growth on GaAs and Bi_2Te_3 during the anodization process was observed with an in situ photoacoustic technique. It was shown that the time dependence of the normalized change in the photoacoustic signal reflects the anodic film growth on GaAs and Bi_2Te_3. The photoacoustic technique is complementary to the differential reflectance technique; the measured quantity is a change in transmittance of the electrolyte-anodic film-substrate system for the former case and a change in reflectance of the three phase system for the latter case. Experimental results obtained in the photoacoustic measurements are discussed in relation to those previously obtained in the differential reflectance and in situ ellipsometry measurements.
- 社団法人応用物理学会の論文
- 1981-08-05
著者
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Yamagishi Chouho
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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