Schottky-Barrier Electroreflectance Measurements in GaAs by a Sample Rotating Technique
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概要
- 論文の詳細を見る
A new technique to measure linear low-field-electroreflectance (ER) of GaAs in the Schottky-barrier configuration is presented. The method is based on the sinusoidal polarization dependence of linear ER in the (100) surface which makes it possible to separate linear ER from quadratic ER automatically by a sample rotation.
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Nakai Junkichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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TACHI Shin-ichi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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KOSHINAKA Masao
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Koshinaka Masao
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Tachi Shin-ichi
Department Of Electronic Engineering Faculty Of Engineering Osaka University:(present Address)centra
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NAKAI Junkichi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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