Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Institute of Metalsの論文
• 2010-05-01

著者

• MIYAZAKI Hisashi

  Department of Physical Electronics, Tokyo Institute of Technology

• MATOBA Akinari

  Graduate School of Natural Science & Technology, Kanazawa University

• SASAKI Kimihiro

  Graduate School of Natural Science & Technology, Kanazawa University

• MORIMOTO Jun

  Department of Materials Science and Engineering, National Defense Academy

• Morimoto J

  Department Of Materials Science And Engineering National Defense Academy

• Matoba Akinari

  Graduate School Of Natural Sci. & Technol. Kanazawa Univ.

• Matoba Akinari

  Graduate School Of Natural Science And Technology Kanazawa University

• 笹木 敬司

  北海道大学電子科学研究所

• Sasaki K

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• OKAMOTO Yoichi

  Department of Materials Science and Engineering, National Defense Academy

• TAKIGUCHI Hiroaki

  Department of Materials Science and Engineering, National Defense Academy

• Sasaki K

  Department Of Electrical And Computer Engineering Kanazawa University

• Sasaki Kimihiro

  Graduate School Of Natural Sci. & Technol. Kanazawa Univ.

• Sasaki Kimihiro

  Graduate School Of Natural Science And Technology Kanazawa University

• Takiguchi Hiroaki

  Department Of Materials Science And Engineering National Defense Academy

• Miyazaki Hisashi

  Department Of Applied Physics Osaka City University

• Morimoto Jun

  Department Of Applied Physics National Defense Academy

• Sasaki Koichi

  Department Of Electronics Nagoya University

• Okamoto Y

  Department Of Materials Science And Engineering National Defense Academy

• Okamoto Yoichi

  Department Of Applied Physics National Defense Academy

• Sasaki Koh

  Institute For Materials Research Tohoku University

関連論文

• P3-34 Nonradiative Recombination Process in Semi-insulating 6H-SiC Bulk Single Crystals Evaluated by Photoacoustic Spectroscopy(Poster session 3)
• P3-33 Thermal Diffusivity of Semi-Insulating 6H-SiC Single Crystal Wafers Evaluated by Photopyroelectric (PPE) Method(Poster session 3)
• Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
• 25aPS-70 微小球共振器に結合したCdSe/ZnS量子ドットの蛍光解析(25aPS 領域5ポスターセッション,領域5(光物性))
• Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates
• 25aZF-11 軌道角運動量重ね合わせ状態検出における余分な方位角成分II(量子エレクトロニクス(量子情報),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 22aZA-6 軌道角運動量重ね合わせ状態検出における余分な方位角成分(22aZA 量子エレクトロニクス(量子光学),領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 23pRH-15 軌道角運動量重ね合わせ状態検出における余分な方位角成分の影響(量子エレクトロニクス(量子光学),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 28aYN-6 光子数検出器を用いた量子テレポーテーション実験の検証
• 26aRB-10 4光子を用いた超解像度位相測定(26aRB 量子エレクトロニクス(量子光学),領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 27pYE-4 テーパファイバと結合した微小球共振器におけるファノ効果(量子エレクトロニクス(量子光学),領域1(原子・分子,量子エレクトロニクス,放射線物理))
• 13pTF-5 テーパファイハと結合した微小球の光共鳴特性の評価(量子エレクトロニクス, 領域 1)
• 23aTF-8 ファーフィールド観察による枝付き微小球共振器の共鳴モード同定
• 20aTB-10 狭帯域レーザーを用いた枝つき微小球の光共鳴特性解析
• Studies of Defect Detection and Thermal Influence in Semi-Insulating 6H-SiC Substrates Using a Long-Wavelength Infrared Thermal Imaging Camera
• 26aZF-5 もつれ合いフィルタの実証実験(量子エレクトロニクス(量子情報・イオントラップ),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 23pQD-3 高精度評価系による、光制御ノットゲートのエラー解析II(量子エレクトロニクス(量子光学,微小共振器),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 23pQD-4 独立した伝令付き単一光子源によるHong-Ou-Mandelディップ(量子エレクトロニクス(量子光学,微小共振器),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 23pRH-14 高精度評価系による、光制御ノットゲートのエラー解析(量子エレクトロニクス(量子光学),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 24pRG-7 非局所量子フィルタの検証実験(量子エレクトロニクス(量子情報),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 21pXK-2 Hong-Ou-Mandel型干渉による2光子状態のモード同一度測定(量子エレクトロニクス(量子光学),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 21pXK-3 多光子干渉を用いた位相測定と標準量子限界(量子エレクトロニクス(量子光学),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 27aSD-7 低温でのテーパーファイバーと微小球共振器とのカップリング(27aSD 量子エレクトロニクス(若手奨励賞受賞講演・近接場量子光学),領域1(原子・分子,量子エレクトロニクス,放射線物理))
• ファイバー結合微小球共振器を用いた固体量子位相ゲートの実現に向けて
• 23pQD-13 テーパファイバ結合微小球共振器の共鳴モードにおける光位相シフト(量子エレクトロニクス(量子光学,微小共振器),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 21aRH-10 ファイバー結合微小球共振器における自然放出結合係数の制御(量子エレクトロニクス(高強度レーザー・コヒーレント過渡現象・微小共振器),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 20pXK-5 Er, Al, P含有ゾルゲルガラスでコートしたテーパーファイバー結合微小球レーザーの発振特性(量子エレクトロニクス(量子光学),領域1,原子・分子,量子エレクトロニクス,放射線物理)
• 欠陥領域を用いたランダム構造内の局在モード特性制御
• Studies of Localized Levels in HgCdTe Grown on Si and CdZnTe Substrates Using Metal-Organic Chemical Vapor Deposition
• Deep Levels in Hg_Cd_Te Grown by Metal-Organic Chemical Vapor Deposition
• Studies of Deep Levels in HgCdTe Grown on CdZnTe and Si Substrates
• Study of Deep Levels in Mesa-Type HgCdTe Device
• Efficiency Improvement of Cu(InGa)Se_2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
• Superimposed Emissions on Enhanced Green Emission from ZnO:Pr Powders by Evacuated Sealed Silica Tube Method
• Thermoelectric Properties of Amorphous Zinc Oxide Thin Films Fabricated by Pulsed Laser Deposition
• Photoacoustic Spectra of Heavily Co-Doped ZnO Powders
• Nonradiative Transition Processes Observed from Photoacoustic Spectra of ZnO Thin Films Fabricated by Pulsed Laser Deposition
• Substrate Dependence of Photoacoustic Spectra on 3, 4, 9, 10-Perylenetetracarboxylic Dianhydride (PTCDA) Films(Evaluation Methods and Characterization of Organic Materials)(Recent Progress in Organic Molecular Electronics)
• Photoacoustic Spectra from Co Doped ZnO with Different Grain or Cluster Sizes
• Estimation of Schottky Contacts to Porous Si by Photoacoustic Spectroscopy
• Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
• Distributions of Interface States and Bulk Traps in ZnO Varistors
• Structural Analysis of Hydrogenated a-Si Films by Reverse Monte Carlo Simulation
• Development of Structural Analysis Method Based on Reverse Monte Carlo Simulation and Its Application to Catalytic Chemical Vapor Deposition Hydrogenated Amorphous Silicon
• CB : a humanoid research platform for exploring neuroscience
• The Measurement of Annealing Cycle Effect of Si-Ge-Au Amorphous Thin Film with Anomalously Large Thermoelectric Power by Using Photoacoustic Spectroscopy
• Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
• Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
• Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of DX-centers in Al_xGa_As:Sn : Electrical Properties of Condensed Matter
• Thermoelectric Characteristics of Sintered SiC/Cu Semiconductors
• Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films
• Annealing Temperature Dependence of the Amorphous Structure of Amorphous Si-Ge-Au Thin Films
• Anomalous Large Thermoelectric PoWer on Heavily B-Doped SiGe Thin Films with Thermal Annealing : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of Sb_2O_3-Doped ZnO Varistors by Photoacoustic Spectroscopy
• Size Effects on Photoacoustic Spectra for GaAs Fine Powder
• Photoacoustic Spectra on the Bi or Pr Doped ZnO Varistors
• Characterization of Interface States in Degraded ZnO Varistors(Electrical Properties of Condensed Matter)
• Pinning Effect by Interface States in Pr-type ZnO Varistors : Electrical Properties of Condensed Matter
• Photoacoustic Spectra on the ZnO and CdO Compound Semiconductor
• Deep Trap Measurement in Hg_Cd_xTe by Isothermal Capacitance and Deep-Level Transient Spectroscopy
• Improvement of Signal-to-Noise Ratio in Microphone Photoacoustic Spectroscopy
• Thermoelectric Characteristics of Si/Ge Superlattice Thin Films at Temperatures Less Than 300 K
• Photoacoustic Spectra of ZnO-Co Alloy Semiconductors
• The Study of Interface States in ZnO Varistors by Injection Pulse Width Dependence of Transient Response
• Photoacoustic Spectra of CdS: Cu by Piezoelectric Transducers : Photo-Acoustic Spectroscopy
• Analysis of Infrared Photoacoustic Wave Form Detected by Piezoelectric Transducer : Photoacoustic Spectroscopy and Ultrasonic Microscopy
• Auger Electron Spectroscopy of Cu_2S-CdS Heterojunction Interface
• Line Spectrum Emission on a Surface and Switching Characteristics of (Ni_Zn_)Fe_2O_4 Ferrite under Pulse Voltage
• Auger Electron Spectroscopy of the Polar (0001) and (0001^^-) Surfaces of CbS Single Crystal
• Stretched Exponential Capacitance Transient and Emission Rate Spectrum of DX-Centers
• Photoelectrical Characteristics of Cu_2S-CdS Heterojunction Diodes
• On-Line Optimal Control Strategy for a Consecutive Reaction System
• Barrier Model of Cu_2S-CdS Heterojunction Diodes Estimated from Open-Circuit Photovoltage Spectrum and Cathodoluminescence
• Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
• Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
• Amplitude and Phase Signals of the Photothermal Deflection Images
• Thermoelectric Properties of and Dopant Distribution in SiC Thin Films
• Photoacoustic Spectrum and Surface Morphology of Porous Silicon
• Band Gap of Porous Silicon Estimated by Photoacoustic Spectra
• ポリシラスチレンにより密度制御したSiC/Cu系の熱電特性
• 交流法によるSiC/Cuのゼーベック係数及び熱伝導率の測定
• Deep Impurity Centers in CdS Single Crystals Studied by Spectral Analysis of Deep Level Transient Spectroscopy
• Photoacoustic Spectroscopy of Cu_xS/CdS Heterojunction
• Thermal Diffusivity of Semiconductors Evaluated by Differential PPE Method : Physical Acoustics
• Vanadium-Related Deep Levels in n-Silicon Detected by Junction Capacitance Waveform Analysis
• Pulsed Photoacoustic Effect in Semiconductors : Photoacoustic Effect and Spectroscopy
• Secondary Photoacoustic Spectra of CdS: Cu by Gas-microphone Method : Photoacoustic Spectroscopy
• Evaluation of ZnO Varistors by Photoacoustic Spectroscopy
• Luminescence Lines Due to the n=2 Free Exciton State of Wannier Series in Kl Crystals
• Line Shapes of Zero Phonon and LO Phonon Assisted Luminescence Due to Free Excitons in KI and RbI Crystals
• Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping
• Photoacoustic Signal Induced by Pulse Ruby Laser in CdS : Photo-Acoustic Spectroscopy
• The Study of the Origin of the Anomalously Large Thermoelectric Power of Si/Ge Superlattice Thin Film
• Anomalous Large Thermoelectric Power of the Si and Au Doped Ge Superlattice Thin Film
• Distribution of Deep Level Parameters in Spectral Analysis of DLTS (SADLTS) : Electrical Properties of Condensed Matter
• Evaluation of Interface States in ZnO Varistors by Spectral Analysis of Deep Level Transient Spectroscopy
• Feを添加したSiCの熱電特性
• Temperature dependence of the thermoelectric properties of Si doped SiC
• Siを添加した焼結半導体SiCの熱電特性
• Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates

もっと見る 閉じる

スポンサーリンク