Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping

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概要

• 論文の詳細を見る
• Japan Institute of Metalsの論文
• 2008-08-01

著者

• SASAKI Kimihiro

  Graduate School of Natural Science & Technology, Kanazawa University

• Matoba Akinari

  Graduate School Of Natural Sci. & Technol. Kanazawa Univ.

• Sasaki Kimihiro

  Graduate School Of Natural Sci. & Technol. Kanazawa Univ.

• MATOBA Akinari

  Kanazawa University

• WATASE Hiroyuki

  Kanazawa University

• KITAI Masahiro

  Kanazawa University

関連論文

• Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates
• Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power
• Anomalous Large Thermoelectric PoWer on Heavily B-Doped SiGe Thin Films with Thermal Annealing : Structure and Mechanical and Thermal Properties of Condensed Matter
• Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping
• Improved Dielectric Properties of Tetragonal ZrO2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering
• Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates
• Unbalanced Magnetron Sputtering Using Cylindrical Target for Low-Temperature Optical Coating

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