Improved Dielectric Properties of Tetragonal ZrO2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering

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概要

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• Crystalline ZrO2 thin films were prepared by ozone-assisted sputtering under different growth temperatures, and their structures and dielectric properties were investigated. The results indicate that the epitaxial tetragonal ZrO2 film deposited at 700 °C exhibits a dielectric constant as high as 38. Furthermore, the interfacial properties are improved in the epitaxial film. As a result, it shows good dielectric properties, such as negligible flatband shift and loop hysteresis, small frequency dispersions in the capacitance–voltage curves, and a low leakage current, which make it a very promising material for future complementary metal–oxide–semiconductor (CMOS) devices.

• 2009-06-25

著者

• Sasaki Kimihiro

  Graduate School Of Natural Sci. & Technol. Kanazawa Univ.

• Zhou Ying

  Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan

• Kumeda Minoru

  Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan

• Sasaki Kimihiro

  Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan

• Inosaka Naoya

  Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan

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