Structural Properties of Silicon Thin Films Prepared by Hot-Wire-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon films and microcrystalline silicon films were prepared by hot-wire-assisted electron cyclotron resonance chemical vapor deposition. The structural properties of the films were analyzed using infrared absorption spectroscopy, Raman scattering spectroscopy, spectroscopic ellipsometry and low-energy absorption by the constant-photocurrent method. It was found that the film properties were controlled smoothly by changing the hot-wire temperature. The amorphous structure of the film becomes dense, and the film changes to amorphous–microcrystalline mixed-phase film with increasing hot-wire temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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Kawae Takeshi
Graduate School Of Natural Science And Technology Kanazawa University
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Morimoto Akiharu
Graduate School Of Natural Science And Technology Kanazawa University
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Li Ying
Graduate School Of Agriculture Hokkaido University
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Kumeda Minoru
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan
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Morimoto Akiharu
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Chen Guanghua
Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
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Kawae Takeshi
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Kumeda Minoru
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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